SD107WS vishay semiconductors formerly general semiconductor document number 88249 www.vishay.com 4-apr-02 1 new product schottky diode features ?low turn-on voltage ?fast switching ?microminiature plastic package ?this device is protected by a pn junction guard ring against excessive voltage, such as electrostatic discharge. ?ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. maximum ratings and thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol value unit continuous reverse voltage v r 30 v forward current i f 100 ma forward surge current, t p = 10 ms i fsm 0.75 a power dissipation t c = 25 cp tot 250 (1) mw thermal resistance junction to ambient air r ja 500 c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit reverse breakdown voltage bv r i r = 100 a30 v leakage current i r v r = 25v 1000 na i f = 2.0ma 300 forward voltage v f i f = 15ma 360 mv i f = 50ma 470 550 i f = 100ma 580 800 junction capacitance c tot v r = 10v, f = 1.0mhz 7.0 pf note: (1) valid provided that electrodes are kept at ambient temperature mechanical data case: sod-323 plastic case weight: approximately 0.004g marking code: s1 packaging codes/options: d5/10k per 13 reel (8mm tape), 30k/box d6/3k per 7 reel (8mm tape), 30k/box .006 (0.15) max. .010 (0.25) min. .012 (0.3) .076 (1.95) .112 (2.85) .059 (1.5) .004 (0.1) max. .049 (1.25) max. cathode band to p v i ew .100 (2.55) .065 (1.65) .043 (1.1) 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) mounting pad layout sod-323 dimensions in inches and (millimeters)
SD107WS vishay semiconductors formerly general semiconductor www.vishay.com document number 88249 2 4-apr-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 2 4 6 0.0 0.2 0.4 v 0 0.5 1 v ma ma v f i f typical variation of i f for primary conduction thru the schottky barrier typical forward conduction curve of combination schottky barrier and pn junction guard ring v f 0 5 10 15 20 25 pf c tot i f typical capacitance versus reverse voltage 200 0 400 600 800 0102030 v v r 0.01 0.1 1.0 10 100 1000 10,000 a i r typical variation of reverse current at various temperature 0102030 v v r 125 c 100 c 75 c 50 c 25 c
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